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| 2SA812K Elektronische Bauelemente -50 V, -100 mA PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of "-C" specifies halogen and lead free FEATURES Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. (VCE = -6V, IC = -1mA) High Voltage: VCEO = -50V PACKAGE DIMENSIONS SOT-23 3 Collector 1 Base Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 2 Emitter A L 3 H K BS 2 J J K C Top View 1 L S V V G D H All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pc TJ, TSTG Ratings -60 -50 -5 -100 200 +150, -55 ~ +150 Unit V V V mA mW CHARACTERISTICS at Ta = 25C Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE hFE Min. -60 -50 -5 -0.58 90 - Typ. 180 4.5 Max. -100 -100 300 -0.68 600 - Unit V V V nA nA mV V IC=-100uA IC=-1mA IE=-100uA VCB=-60V VEB=-5V Test Conditions IC=100mA, IB=10mA IC = -1mA, VCE = -6V VCE=-6V, IC=-1mA www..com f T MHz pF VCE=-6V, IC=-10mA VCB = -10V, f = 1 MHz Cob CLASSIFICATION OF hFE Rank Range Marking P 90 - 180 M4 Y 135 - 270 M5 G 200 - 400 M6 B 300 - 600 M7 01-June-2002 Rev. A Page 1 of 2 2SA812K Elektronische Bauelemente -50 V, -100 mA PNP Epitaxial Planar Transistor CHARACTERISTIC CURVES www..com 01-June-2002 Rev. A Page 2 of 2 |
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